unisonic technologies co., ltd 2sb1412 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2009 unisonic technologies co., ltd qw-r209-021.b high voltage switching transistor ? description the utc 2sb1412 is an epitaxial planar type pnp silicon transistor. ? features * excellent dc current gain characteristics * low v ce(sat) v ce(sat) = -0.35v (typ) (i c /i b = -4a/-0.1a) to-252 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 2sb1412l-x-tn3-r 2SB1412G-X-TN3-R to-252 b c e tape reel
2sb1412 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r209-021.b ? absolute maximum rating (ta=25 c , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v collector current(dc) i c -5 a collector current(pulse) single pulse, pw=10ms i cp -10 a collector power dissipation p d 1 w collector power dissipation (note2) p d 10(t c =25 c) w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note 1.absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2.when mounted on a 40*40*0.7mm ceramic board. ? electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c = -50 a -30 v collector emitter breakdown voltage bv ceo i c = -1ma -20 v emitter base breakdown voltage bv ebo i e = -50 a -6 v collector cut-off current i cbo v cb = -20v -0.5 a emitter cut-off current i ebo v eb = -5v -0.5 a dc current transfer ratio h fe v ce = -2v,ic= -0.5a 82 390 collector-emitter satu ration voltage v ce(sat) i c /i b = -4a/-0.1a -1.0 v transition frequency f t v ce = -6v, i e = 50 ma, f=30mhz 120 mhz output capacitance c ob v cb = -20v, i e = 0 a, f=1mhz 60 pf ? classification of h fe rank p q r range 82-180 120-270 180-390
2sb1412 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r209-021.b ? typical characteristics 0 -0.2 -2 -1m base to emitter voltage:v be (v) grounded emitter propagation characteristics collector current: ic(ma) -1m-2m -5m -0.01-0.02 200 20 collector current : ic(a) dc current gain vs.collector current (i) dc current gain: h fe 100 -0.4 -0.6 -0.8 -1.4 -1.2 -1.0 -2m -5m 0 -5 0 collector to emitter voltage:v ce (v) grounded emitter output characteristics collector current: ic(a) -1 -0.4 -0.8 -1.6 -2.0 -1.2 -2 -3 -4 i b =0ma ta=25 -10ma -5ma -0.05 -0.1-0.2 -0.5 -1 500 5k collector-emitter saturation voltage vs.collector current (i) collector saturation voltage:v ce ( sat ) ( v) -10m -30ma -45ma -50ma -15ma -20ma -25ma 10 5 -2 -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current : ic(a) -1 -2 -20m -50m -100m -200m -500m -1 -5 -10 v ce = -2v ta=25 ta=100 ta= -25 -40ma -35ma -5 -10 50 1k 2k vc e = -5v vc e = -2v vc e = -1v ta=25 -1m-2m -5m -0.01-0.02 200 20 collector current : ic(a) dc current gain vs.collector current(ii) dc current gain: h fe 100 -0.05 -0.1-0.2 -0.5 -1 500 5k 10 5 -2 -5 -10 50 1k 2k vc e = -1v ta=100 -1m-2m -5m -0.01-0.02 200 20 collector current : ic(a) dc current gain vs.collector current (iii) dc current gain: h fe 100 -0.05 -0.1-0.2 -0.5 -1 500 5k 10 5 -2 -5 -10 50 1k 2k vc e = -2v ta=25 ta=25 ta= -25 ta=100 ta= -25 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta=25 ic/i b =50/1 40/1 30/1 10/1
2sb1412 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r209-021.b ? typical characteristics(cont.) collector output capacitance vs.collector-base voltage collector output capacitance :cob (pf) 100 50 20 10 collector to base voltage:v cb (v) 200 500 12 5 10 20 50 5 emitter current : i e (ma) gain bandwidth product vs.emitter current transetion frequency :ft (mhz) 20 50 100 500 100 1000 2 1 10 200 500 -0.1 -0.2 -0.5 -5 -1 -2 -20 -10 1000 collector-emitter saturation voltage vs.collector current (ii) collector saturation voltage:v ce ( sat ) ( v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current : ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta=100 ic/i b =10 collector-emitter saturation voltage vs.collector current (iii) collector saturation voltage:v ce ( sat ) ( v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current : ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta= -25 ta=25 ic/i b =30 ta=100 ta= -25 ta=25 collector-emitter saturation voltage vs.collector current (iv) collector saturation voltage:v ce ( sat ) ( v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current : ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta=100 ic/i b =40 collector-emitter saturation voltage vs.collector current (v) collector saturation voltage:v ce ( sat ) ( v) -0.2 -0.05 -0.1 -0.5 -0.02 -0.01 collector current : ic(a) -1 -2 -2m -5m -0.01-0.02 -0.05 -0.1 -0.5 -1 -2 -5 -10 -0.2 -5 ta= -25 ta=25 ic/i b =50 ta=100 ta= -25 ta=25 200 1000 vc e = -6v ta=25 ta=25 f =1mhz i e =0a -50
2sb1412 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r209-021.b ? typical characteristics(cont.) 1000 -0.1 20 emitter to base voltage : v eb (v) emitter input capacitance vs.emitter- base voltage emitter input capacitance:cib (pf) 50 -0.2 -0.5 -2 -5 -1 100 200 -10 500 i c =0a ta=25 f=1mhz utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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